Data Sheet

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT5210M, MCT5211M Rev. 1.3 4
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Symbol Parameters Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 5 mA 1.25 1.50 V
Δ V
F
Δ T
A
Forward Voltage Temperature
Coefficient
I
F
= 2 mA -1.75 mV/°C
V
R
Reverse Voltage I
R
= 10 µA 6 V
C
J
Junction Capacitance V
F
= 0 V, f = 1.0 MHz 18 pF
DETECTOR
BV
CEO
Breakdown Voltage,
Collector-to-Emitter
I
C
= 1.0 mA, I
F
= 0 30 100 V
BV
CBO
Breakdown Voltage,
Collector-to-Base
I
C
= 10 µA, I
F
= 0 30 120 V
BV
EBO
Breakdown Voltage,
Emitter-to-Base
I
E
= 10 µA, I
F
= 0 5 10 V
I
CER
Dark Current, Collector-to-Emitter V
CE
= 10 V, I
F
= 0, R
BE
= 1 M Ω 1 100 nA
C
CE
Capacitance, Collector-to-Emitter V
CE
= 0, f = 1 MHz 10 pF
C
CB
Capacitance, Collector-to-Base V
CB
= 0, f = 1 MHz 80 pF
C
EB
Capacitance, Emitter-to-Base V
EB
= 0, f = 1 MHz 15 pF