Data Sheet

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MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers

MCT5210M, MCT5211M Rev. 1.3

April 2015

MCT5210M, MCT5211M

6-Pin DIP Low Input Current Phototransistor Optocouplers

Features

■

High CTR

CE(SAT)

Comparable to Darlingtons

■

High Common Mode Transient Rejection: 5 kV/µs

■

Data Rates Up to 150 kbits/s (NRZ)

■

Safety and Regulatory Approvals:

– UL1577, 4,170 VAC

RMS

for 1 Minute

– DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

Applications

■

CMOS to CMOS/LSTTL Logic Isolation

■

LSTTL to CMOS/LSTTL Logic Isolation

■

RS-232 Line Receiver

■

Telephone Ring Detector

■

AC Line Voltage Sensing

■

Switching Power Supply

Description

The MCT5210M and MCT5211M devices consist of a

high-efficiency AlGaAs infrared emitting diode coupled

with an NPN phototransistor in a six-pin dual-in-line

package.

The devices are well suited for CMOS to LSTT/TTL inter-

faces, offering 250% CTR

CE(SAT)

with 1 mA of LED input

current. With an LED input current of 1.6 mA, data rates

to 20K bits/s are possible.

Both can easily interface LSTTL to LSTTL/TTL, and with

use of an external base-to-emitter resistor data rates of

100K bits/s can be achieved.

Schematic Package Outlines

Figure 2. Package Outlines

Figure 1. Schematic

5 COLLECTOR

4 EMITTER

BASE

ANODE

CATHODE