Datasheet
MC79L00A Series
http://onsemi.com
2
MAXIMUM RATINGS (T
A
= +25°C, unless otherwise noted.)
Rating Symbol Value Unit
Input Voltage (−5 V)
(−12, −15, −18 V)
(−24 V)
V
I
−30
−35
−40
Vdc
Power Dissipation
Case 29 (TO−92 Type)
T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Case 751 (SOIC−8 Type) (Note 1)
T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
PD
R
q
JA
R
q
JC
PD
R
q
JA
R
q
JC
Internally Limited
160
83
Internally Limited
180
45
W
°C/W
°C/W
W
°C/W
°C/W
Storage Temperature Range T
stg
−65 to +150 °C
Junction Temperature T
J
+150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. SOIC−8 Junction−to−Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 9 for Thermal Resistance variation
versus pad size.
*This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD_883, Method 3015
Machine Model Method 200 V.
ELECTRICAL CHARACTERISTICS (V
I
= −10 V, I
O
= 40 mA, C
I
= 0.33 mF, C
O
= 0.1 mF, −40°C < T
J
+125°C (for MC79LXXAB),
0°C < T
J
< +125°C (for MC79LXXAC)).
MC79L05AC, AB
Characteristics Symbol Min Typ Max Unit
Output Voltage (T
J
= +25°C) V
O
−4.8 −5.0 −5.2 Vdc
Input Regulation (T
J
= +25°C)
−7.0 Vdc ≥ V
I
≥ −20 Vdc
−8.0 Vdc ≥ V
I
≥ −20 Vdc
Reg
line
−
−
−
−
150
100
mV
Load Regulation
T
J
= +25°C, 1.0 mA ≤ I
O
≤ 100 mA
1.0 mA ≤ I
O
≤ 40 mA
Reg
load
−
−
−
−
60
30
mV
Output Voltage
−7.0 Vdc ≥ V
I
≥ −20 Vdc, 1.0 mA ≤ I
O
≤ 40 mA
V
I
= −10 Vdc, 1.0 mA ≤ I
O
≤ 70 mA
V
O
−4.75
−4.75
−
−
−5.25
−5.25
Vdc
Input Bias Current
(T
J
= +25°C)
(T
J
= +125°C)
I
IB
−
−
−
−
6.0
5.5
mA
Input Bias Current Change
−8.0 Vdc ≥ V
I
≥ −20 Vdc
1.0 mA ≤ I
O
≤ 40 mA
I
IB
−
−
−
−
1.5
0.1
mA
Output Noise Voltage (T
A
= +25°C, 10 Hz ≤ f ≤ 100 kHz) V
n
− 40 − mV
Ripple Rejection (−8.0 ≥ V
I
≥ −18 Vdc, f = 120 Hz, T
J
= +25°C) RR 41 49 − dB
Dropout Voltage (I
O
= 40 mA, T
J
= +25°C) |V
I
−V
O
| − 1.7 − Vdc