Datasheet

MC34151, MC33151
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
CC
20 V
Logic Inputs (Note 1) V
in
−0.3 to V
CC
V
Drive Outputs (Note 2)
Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to V
CC
)
I
O
I
O(clamp)
1.5
1.0
A
Power Dissipation and Thermal Characteristics
D Suffix SOIC−8 Package Case 751
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P Suffix 8−Pin Package Case 626
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P
D
R
q
JA
P
D
R
q
JA
0.56
180
1.0
100
W
°C/W
W
°C/W
Operating Junction Temperature T
J
+150 °C
Operating Ambient Temperature
MC34151
MC33151
MC33151V
T
A
0 to +70
−40 to +85
−40 to +125
°C
Storage Temperature Range T
stg
−65 to +150 °C
Electrostatic Discharge Sensitivity (ESD) (Note 3)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2000
200
1500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V
CC
, whichever is less.
2. Maximum package power dissipation limits must be observed.
3. ESD protection per JEDEC Standard JESD22−A114−F for HBM
per JEDEC Standard JESD22−A115−A for MM
per JEDEC Standard JESD22−C101D for CDM.