Data Sheet

MBR4035PT - MBR4060PT — 40 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR4035PT - MBR4060PT Rev. 1.1.2 1
October 2013
MBR4035PT - MBR4060PT
40 A Schottky Barrier Rectifiers
Features
Low Power Loss, High Efficiency
High Surge Capacity
Metal Silicon Junction, Majority Carrier Conduction
High Current Capacity, Low Forward Voltage Drop
Guard Ring for Over-Voltage Protection (OVP)
Applications
Low-Voltage
High-Frequency Inverters
Free Wheeling
Polarity Protection
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number Marking Package Packing Method
MBR4035PT MBR4035PT
TO-247 3L Rail
MBR4045PT MBR4045PT
MBR4050PT MBR4050PT
MBR4060PT MBR4060PT
Symbol Parameter
Value
Units
MBR
4035PT
MBR
4045PT
MBR
4050PT
MBR
4060PT
V
RRM
Maximum Repetitive Reverse Voltage 35 45 50 60 V
I
F(AV)
Average Rectified Forward Current
.375-inch Lead Length at T
A
= 125°C
40 A
I
FSM
Non-Repetitive Peak Forward Surge
Current: 8.3 ms Single Half-Sine-Wave
400 A
T
STG
Storage Temperature Range -65 to +175 °C
T
J
Operating Junction Temperature Range -65 to +150 °C
Description
This center-tap Schottky rectifier is optimal for secondary
rectification and free-wheeling applications for high-effi-
ciency DC-DC convertor design, which features very low
forward voltage drop and low leakage current.
+
PIN1
PIN3
CASE
PIN2