Data Sheet

MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT - MBR2560CT Rev. 1.3.0 1
June 2013
MBR2535CT - MBR2560CT
25 A Schottky Barrier Rectifiers
Features
• Low Power Loss, High Efficiency
• High Surge Capacity
• Metal Silicon Junction, Majority Carrier Conduction
• High Current Capacity, Low Forward Voltage Drop
• Guard Ring for Over-Voltage Protection (OVP)
Applications
• Low-Voltage, High-Frequency Inverters
• Free Wheeling and Polarity Protection
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
Value
Units
2535CT 2545CT 2550CT 2560CT
V
RRM
Maximum Repetitive Reverse Voltage 35 45 50 60 V
I
F(AV)
Average Rectified Forward Current
.375 inch Lead Length at T
A
= 130°C
25 A
I
FSM
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
200 A
T
STG
Storage Temperature Range -65 to +175 °C
T
J
Operating Junction Temperature Range -65 to +150 °C
Symbol Parameter Value Units
P
D
Power Dissipation 2.0 W
R
θJA
Thermal Resistance, Junction to Ambient 60 °C/W
R
θJL
Thermal Resistance, Junction to Lead 1.5 °C/W
TO-220AB
1
2
3
+
PIN1
PIN3
CASE
PIN2