Datasheet

ManualsBrandsON Semiconductor ManualsDiodesSchottky Diode, 10A, 100V, TO-220

June, 2008 − Rev. 10

1 Publication Order Number:

MBR1060/D

MBR1060, MBR1080,

MBR1090, MBR10100

MBR1060 and MBR10100 are Preferred Devices

SWITCHMODEt

Power Rectifiers

This series of SWITCHMODE power rectifiers uses the Schottky

Barrier principle with a platinum barrier metal. These state−of−the−art

devices have the following features:

Features

• Guard−Ring for Stress Protection

• Low Forward Voltage

• 175°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Low Power Loss/High Efficiency

• High Surge Capacity

• Low Stored Charge Majority Carrier Conduction

• Pb−Free Packages are Available*

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 1.9 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCHOTTKY BARRIER

RECTIFIERS

10 AMPERES, 60 to 100 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

3 1, 4

TO−220AC

CASE 221B

PLASTIC

MARKING

DIAGRAM

AY WWG

B10x0

Device Package Shipping

ORDERING INFORMATION

MBR1060 TO−220 50 Units/Rail

MBR1080 TO−220 50 Units/Rail

MBR1060G TO−220

(Pb−Free)

50 Units/Rail

MBR10100G TO−220

(Pb−Free)

50 Units/Rail

http://onsemi.com

MBR1090 TO−220 50 Units/Rail

MBR10100 TO−220 50 Units/Rail

MBR1090G TO−220

(Pb−Free)

50 Units/Rail

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

B10x0 = Device Code

x = 6, 8, 9 or 10

KA = Diode Polarity

MBR1080G TO−220

(Pb−Free)

50 Units/Rail

Summary of content (4 pages)

PAGE 1
MBR1060, MBR1080, MBR1090, MBR10100 MBR1060 and MBR10100 are Preferred Devices SWITCHMODEt Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • • • • • • • • Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.
PAGE 2
MBR1060, MBR1080, MBR1090, MBR10100 MAXIMUM RATINGS Rating Symbol MBR 1060 1080 1090 10100 60 80 90 100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetiti
PAGE 3
10 50 TJ = 150°C 20 IR , REVERSE CURRENT (mA) 150°C 10 100°C 125°C 5.0 3.0 TJ = 25°C 1.0 1.0 125°C 0.1 100°C 0.01 0.001 25°C 0.5 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 1.0 0.9 20 40 60 Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current I F(AV) , AVERAGE FORWARD CURRENT (AMPS) RATED VOLTAGE APPLIED RqJC = 2°C/W dc 15 SQUARE WAVE 10 5.0 0 100 120 140 TC, CASE TEMPERATURE (°C) 160 20 (HEATSINK) RqJA = 16°C/W (NO HEATSINK) RqJA = 60°C/W 15 dc 5.
PAGE 4
MBR1060, MBR1080, MBR1090, MBR10100 PACKAGE DIMENSIONS TO−220 CASE 221B−04 ISSUE E C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 3 U H K L R D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. J INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.