Data Sheet

MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current
(Rated V
R
, T
L
= 90C)
I
F(AV)
0.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
5.5
A
Storage Temperature Range T
stg
−65 to +150 C
Operating Junction Temperature T
J
−65 to +125 C
Voltage Rate of Change (Rated V
R
) dv/dt 1000
V/ms
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance; Junction−to−Ambient (Note 1)
R
q
JA
206 C/W
Thermal Resistance; Junction−to−Lead
R
q
JL
150 C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
v
F
T
J
= 25C T
J
= 100C
V
(i
F
= 0.1 Amps)
(i
F
= 0.5 Amps)
0.300
0.385
0.220
0.330
Maximum Instantaneous Reverse Current (Note 2)
I
R
T
J
= 25C T
J
= 100C
mA
(V
R
= 10 V)
(Rated DC Voltage = 20 V)
75 mA
250 mA
5 mA
8 mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2%.