Datasheet
MAC15 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
2.0
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Blocking Current T
J
= 25°C
(V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 125°C
I
DRM,
I
RRM
—
—
—
—
10
2.0
µA
mA
ON CHARACTERISTICS
Peak On–State Voltage
(1)
(I
TM
=
"
21 A Peak) V
TM
— 1.3 1.6 Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY
I
GT
—
—
—
—
—
—
—
—
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY
V
GT
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
2.5
Volts
Gate Non–Trigger Voltage
(V
D
= 12 V, R
L
= 100 Ohms, T
J
= 110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY
V
GD
0.2
0.2
—
—
—
—
Volts
Holding Current
(V
D
= 12 Vdc, Gate Open, Initiating Current =
"
200 mA)
I
H
— 6.0 40
mA
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 17 A)
(I
GT
= 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
t
gt
— 1.5 — µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, T
C
= 80°C)
dv/dt(c) — 5.0 — V/µs
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.