Data Sheet

KST10 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST10 Rev. 1.1.0 2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100 μA, I
E
= 0 30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 1 mA, I
B
= 0 25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10 μA, I
C
= 0 3 V
I
CBO
Collector Cut-Off Current V
CB
= 25 V, I
E
= 0 100 nA
I
EBO
Emitter Cut-Off Current V
EB
= 2 V, I
C
= 0 100 nA
h
FE
DC Current Gain V
CE
= 10 V, I
C
= 4 mA 60
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 4 mA, I
B
= 0.4 mA 0.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 10 V, I
C
= 4 mA 0.95 V
f
T
Current Gain Bandwidth Product
V
CE
= 10 V, I
C
= 4 mA,
f = 100 MHz
650 MHz
C
ob
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
0.7 pF
C
rb
Common-Base Feedback Capacitance
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
0.65 pF
C
c·rbb´
Collector-Base Time Constant
V
CB
= 10 V, I
C
= 4 mA,
f = 31.8 MHz
9pF