Data Sheet

KST10 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST10 Rev. 1.1.0
October 2014
KST10
NPN Epitaxial Silicon Transistor
Features
• VHF / UHF Transistor
Ordering Information
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Note:
1. Refer to KSP10 for graphs.
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Marking Package Packing Method
KST10MTF 3E SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 3 V
T
STG
Storage Temperature 150 °C
Symbol Parameter Value Unit
P
D
Power Dissipation 350 mW
Derate Above 25°C2.8mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 357 °C/W
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3