Data Sheet

©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
KSP92/93
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSP92
: KSP93
-300
-200
V
V
V
CEO
Collector-Emitter Voltage
: KSP92
: KSP93
-300
-200
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -500 mA
P
C
Collector Power Dissipation (T
a
=25°C) 625 mW
Derate above 25°C5mW/°C
P
C
Collector Power Dissipation (T
C
=25°C) 1.5 W
Derate above 25°C12mW/°C
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP92
: KSP93
I
C
= -100µA, I
E
=0
-300
-200
V
V
BV
CEO
* Collector-Emitter Breakdown Voltage
: KSP92
: KSP93
I
C
= -1mA, I
B
=0
-300
-200
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100µA, I
C
=0 -5 V
I
CBO
Collector Cur-off Current
: KSP92
: KSP93
V
CB
= -200V, I
E
=0
V
CB
= -160V, I
E
=0
-0.25
-0.25
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= -3V, I
C
=0 -0.10 µA
h
FE
* DC Current Gain V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
25
40
25
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= -20mA, I
B
= -2mA -0.50 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= -20mA, I
B
= -2mA -0.90 V
f
T
Current Gain Bandwidth Product V
CE
= -20V, I
C
= -10mA, f=100MHz 50 MHz
C
ob
Output Capacitance
: KSP92
: KSP93
V
CB
= -20V, I
E
=0
f=1MHz
6
8
pF
pF
KSP92/93
High Voltage Transistor
1. Emitter 2. Base 3. Collector
TO-92
1