Data Sheet

KSP2907A — PNP General-Purpose Amplifier
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSP2907A Rev. 2.4 2
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
2. Infinite heat sink.
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. DC items are tested by pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
Symbol Parameter Max. Unit
P
D
Power Dissipation by R
θJA
625 mW
Derate Above 25°C5mW/°C
R
θJC
Thermal Resistance, Junction-to-Case
(2)
83.3 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(3)
200 °C/W
Symbol Parameter Conditions Min. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= -10 μA, I
E
= 0 -60 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0 -60 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10 μA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-Off Current V
CB
= -50 V, I
E
= 0 -10 nA
h
FE
DC Current Gain
V
CE
= -10 V, I
C
= -0.1 mA 75
V
CE
= -10 V, I
C
= -1 mA 100
V
CE
= -10 V, I
C
= -10 mA 100
V
CE
= -10 V, I
C
= -150 mA 100 300
V
CE
= -10 V, I
C
= -500 mA 50
V
CE
(sat) Collector-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA -0.4
V
I
C
= -500 mA, I
B
= -50 mA -1.6
V
BE
(sat) Base-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA -1.3
V
I
C
= -500 mA, I
B
= -50 mA -2.6
C
obo
Output Capacitance
V
CB
= -10 V, I
E
= 0,
f = 1.0 MHz
8pF
f
T
Current Gain Bandwidth Product
I
C
= -50 mA, V
CE
= -20 V,
f = 100 MHz
200 MHz
t
ON
Turn-On Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= -15 mA
45 ns
t
OFF
Turn-Off Time
V
CC
= -6 V, I
C
= -150 mA,
I
B1
= I
B2
= -15 mA
100 ns