Data Sheet

KSH122 / KSH122I — NPN Silicon Darlington Transistor
www.onsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
1.
Pul
se test: pw300 s, duty cycle 2%.
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 100 V
V
CEO
Collector-Emitter Voltage 100 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 8 A
I
CP
Collector Current (Pulse) 16 A
I
B
Base Current 120 mA
P
C
Collector Dissipation (T
C
=25C) 20.00
W
Collector Dissipation (T
A
=25C) 1.75
T
J
Junction Temperature 150 C
T
STG
Storage Temperature - 65 to 150 C
Symbol Parameter Conditions Min. Typ. Max. Unit
V
CEO
(sus)
Collector-Emitter Sustaining
Voltage
(1)
I
C
= 30 mA, I
B
= 0 100 V
I
CEO
Collector Cut-Off Current V
CE
= 50 V, I
B
=0 10 A
I
CBO
Collector Cut-Off Current V
CB
= 100 V, I
E
= 0 10 A
I
EBO
Emitter Cut-Off Current V
EB
= 5 V, I
C
= 0 2 mA
h
FE
DC Current Gain
(1)
V
CE
= 4 V, I
C
= 4 A 1000 12000
V
CE
= 4 V, I
C
= 8 A 100
V
CE
(sat)
Collector-Emitter Saturation
Voltage
(1)
I
C
= 4 A, I
B
= 16 mA 2
V
I
C
= 8 A, I
B
= 80 mA 4
V
BE
(sat) Base-Emitter Saturation Voltage
(1)
I
C
= 8 A, I
B
= 80 mA 4.5 V
V
BE
(on) Base-Emitter On Voltage
(1)
V
CE
= 4 V, I
C
= 4 A 2.8 V
C
ob
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 0.1 MHz 200 pF