Data Sheet

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KSH122 / KSH122I — NPN Silicon Darlington Transistor

Publication Order Number:

KSH122/D

October-2017,Rev. 3

KSH122 / KSH122I

NPN Silicon Darlington Transistor

Features

• D-PAK for Surface Mount Applications

• High DC Current Gain

• Built-in Damper Diode at E-C

• Lead Formed for Surface Mount Applications (No Suffix)

• Straight Lead (I-PAK, “ - I ” Suffix)

• Electrically Similar to Popular TIP122

• Complement to KSH127

Applications

• Switching Regulators

• Converters

• Power Amplifiers

Ordering Information

Part Number Top Mark Package Packing Method

KSH122TF KSH122 TO-252 3L (DPAK) Tape and Reel

KSH122TM KSH122 TO-252 3L (DPAK) Tape and Reel

KSH122ITU KSH122-I TO-251 3L (IPAK) Rail

Description

Designed for general-purpose power and switching, such

as output or driver stages in applications.

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Equivalent Circuit

R1 8k

R2 0.12k

Summary of content (5 pages)

PAGE 1
Description Features • • • • • • • Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications. High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I ” Suffix) Electrically Similar to Popular TIP122 Complement to KSH127 Applications • Switching Regulators • Converters • Power Amplifiers Equivalent Circuit C B D-PAK 1 1.Base I-PAK 1 2.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
PAGE 3
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = 4V 1k 100 0.1 1 10 10 IC = 250 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD[s], TURN ON TIME Cob[pF], CAPACITANCE VCC= 30V IC=250IB IB1=-IB2 100 10 1 0.1 1 10 1 tR tD, VBE(off)=0 0.1 0.01 0.
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PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating www.onsemi.
PAGE 5
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