Data Sheet

KSD5041 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSD5041 Rev. 1.5
October 2015
KSD5041
NPN Epitaxial Silicon Transistor
Features
• AF Output Amplifier for Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
KSD5041RTA D5041 TO-92 3L Ammo
KSD5041QTA D5041 TO-92 3L Ammo
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 20 V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current 5 A
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 to 150 °C
1. Emitter
1
2
3
1
2
3
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Collector
3. Base