Data Sheet

©2000 Fairchild Semiconductor International Rev. A, February 2000
KSD1691
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* PW10ms, duty Cycle50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse test: PW50µs, duty Cycle2% Pulsed
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 60 V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current (DC) 5 A
I
CP
*Collector Current (Pulse) 8 A
I
B
Base Current (DC) 1 A
P
C
Collector Dissipation (T
a
=25°C) 1.3 W
P
C
Collector Dissipation (T
C
=25°C) 20 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= 50V, I
E
= 0 10 µA
I
EBO
Emitter Cut-off Current V
EB
= 7V, I
C
= 0 10 µA
h
FE1
h
FE2
h
FE3
*DC Current Gain V
CE
= 1V, I
C
= 0.1A
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 5A
60
100
50
400
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 0.1 0.3 V
V
BE
(sat) *Base-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 0.9 1.2 V
t
ON
Turn ON Time V
CC
= 10V, I
C
= 2A
I
B1
= - I
B2
= 0.2A
R
L
= 5
0.2 1 µs
t
STG
Storage Time 1.1 2.5 µs
t
F
Fall Time 0.2 1 µs
Classification O Y G
h
FE 2
100 ~ 200 160 ~ 320 200 ~ 400
KSD1691
Feature
Low Collector-Emtter Saturation Voltage & Large Collector Current
High Power Dissipation: P
C
= 1.3W (T
a
=25°C)
Complementary to KSB1151
1
TO-126
1. Emitter 2.Collector 3.Base