Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 92 3

KSC2383 — NPN Epitaxial Silicon Transistor

Publication Order Number:

KSC2383/D

October-2017,Rev.2

KSC2383

NPN Epitaxial Silicon Transistor

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

KSC2383OTA C2383 O- TO-92 3L Ammo

KSC2383YTA C2383 Y- TO-92 3L Ammo

Symbol Parameter Value Unit

CBO

Collector-Base Voltage 160 V

CEO

Collector-Emitter Voltage 160 V

EBO

Emitter-Base Voltage 6 V

Collector Current 1 A

Base Current 0.5 A

Junction Temperature 150 °C

STG

Storage Temperature -55 to +150 °C

TO-92L

1. Emitter 2. Collector 3. Base

Summary of content (5 pages)

PAGE 1
KSC2383 — NPN Epitaxial Silicon Transistor KSC2383 NPN Epitaxial Silicon Transistor 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 900 mW Derate Above 25°C 7.2 mW/°C Thermal Resistance, Junction-to-Ambient 138 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max.
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1000 EMITTER COMMON o Ta=25 C 1.2 IB = 15mA EMITTER COMMON IB = 10mA 1.0 hFE, DC CURRENT GAIN Ic[mA], COLLECTOR CURRENT 1.4 IB = 6mA 0.8 IB = 4mA IB = 3mA 0.6 IB = 2.5mA 0.4 IB = 2mA IB = 1.5mA IB = 1mA 0.2 VCE=10V 100 VCE=5V 10 IB = 0.5mA 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 1.4 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2.
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EMITTER COMMON IC MAX. (Pulse) o s MA X. =1 A 0.1 DC Ta =2 5 o C VCEO MAX. 10 IC s 100 10 0m s 1 1m IC[A], COLLECTOR CURRENT Ta = 25 C m 10 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10 1000 0.01 1E-3 1 1 10 100 1 1000 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area www.onsemi.
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