Data Sheet

©2002 Fairchild Semiconductor Corporation Rev. B, October 2002
KSB772
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
- 40 V
V
CEO
Collector-Emitter Voltage
- 30 V
V
EBO
Emitter-Base Voltage
- 5 V
I
C
Collector Current (DC)
- 3 A
I
CP
*Collector Current (Pulse)
- 7 A
I
B
Base Current (DC)
- 0.6 A
P
C
Collector Dissipation (T
C
=25°C)
10 W
Collector Dissipation (T
a
=25°C)
1W
R
θja
Junction to Ambient
132 °C/W
R
θjc
Junction to Case
13.5 °C/W
T
J
Junction Temperature
150 °C
T
STG
Storage Temperature
- 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= - 30V, I
E
= 0 - 1 µA
I
EBO
Emitter Cut-off Current V
EB
= - 3V, I
C
= 0 - 1 µA
h
FE1
h
FE2
* DC Current Gain V
CE
= - 2V, I
C
= - 20mA
V
CE
= - 2V, I
C
= - 1A
30
60
220
160 400
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 2A, I
B
= - 0.2A - 0.3 - 0.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= - 2A, I
B
= - 0.2A - 1.0 - 2.0 V
f
T
Current Gain Bandwidth Product V
CE
= - 5V, I
E
= - 0.1A 80 MHz
C
ob
Output Capacitance V
CB
= - 10V, I
E
= 0
f = 1MHz
55 pF
Classification R O Y G
h
FE2
60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1
TO-126
1. Emitter 2.Collector 3.Base