Data Sheet

KSA928A — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSA928A Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
0-2-4-6-8-10-12-14-16
0
-200
-400
-600
-800
-1000
-1200
-1400
I
B
= -7mA
I
B
= -6mA
I
B
= -4mA
I
B
= -3mA
I
B
= -2mA
I
B
= -5mA
I
B
= -1mA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000
10
100
1000
-5000
V
CE
= -2V
h
FE
, DC CURRENT CURRENT
I
C
[A], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-0.01
-0.1
-1
Ta = 125
o
C
Ta = -40
o
C
Ta = 25
o
C
I
C
= 50 I
B
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.0 -0.2-0.4-0.6-0.8-1.0-1.2-1.4
0
-200
-400
-600
-800
-1000
-1200
-1400
V
CE
= -2V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
I
C
(MAX)
I
C
(MAX)PLUSE
1s
1ms
V
CEO
MAX
D
C
O
p
e
r
a
t
i
o
n
T
a
=
2
5
o
C
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
P
C
[W], POWER DISSIPATION
T
a
[
o
C], AMBIENT TEMPERATURE