Data Sheet

KSA928A — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSA928A Rev. 1.1.0 2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
h
FE
Classification
Symbol Parameter Value Unit
P
D
Power Dissipation 1000 mW
Derate Above 25°C8.0mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 125 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100 μA, I
E
= 0 -30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0 -30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -1 mA, I
C
= 0 -5 V
I
CBO
Collector Cut-Off Current V
CB
= -30 V, I
E
= 0 -100 nA
I
EBO
Emitter Cut-Off Current V
EB
= -5 V, I
C
= 0 -100 nA
h
FE
DC Current Gain V
CE
= -2 V, I
C
= -500 mA 100 320
V
BE
(on) Base-Emitter On Voltage V
CE
= -2 V, I
C
= -500 mA -1.0 V
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -1.5 A, I
B
= -30 mA -2.0 V
C
ob
Output Capacitance
V
CB
= -10 V, I
E
= 0,
f = 1 MHz
48 pF
f
T
Current Gain Bandwidth Product V
CE
= -2 V, I
C
= -500 mA 120 MHz
Classification O Y
h
FE
100 ~ 200 160 ~ 320