Data Sheet

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSA733
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -60 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -150 mA
P
C
Collector Power Dissipation 250 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -60 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA. I
B
=0 -50 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA. I
C
=0 - 5 V
I
CBO
Collector Cut-off Current V
CB
= --60V, I
E
=0 -100 nA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
=0 -100 nA
h
FE
DC Current Gain V
CE
= -6V, I
C
= -1mA 40 700
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -100mA, I
B
= -10mA -0.18 -0.3 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -6V, I
C
= -1mA -0.50 -0.62 -0.80 V
f
T
Current Gain Bandwidth Product V
CE
= -6V, I
C
= -10mA 50 180 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0, f=1MHz 2.8 pF
NF Noise Figure V
CE
= -6V, I
C
= -0.3mA
f=1MHz, Rs=10kΩ
6.0 20 dB
Classification R O Y G L
h
FE
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
KSA733
Low Frequency Amplifier
• Collector-Base Voltage : V
CBO
= -60V
• Complement to KSC945
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1