Data Sheet

KA5X03XX-SERIES
5
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
110
0.1
1
10
@Notes:
1. 300
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
24681
0
0.1
1
10
@Not es:
1. V
DS
= 30V
2. 300
μ
s Pulse Test
-25
o
C
25
o
C
150
o
C
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
012345
0
1
2
3
4
5
6
7
@ Note : Tj=25 ℃
Vgs=10V
Vgs=20V
R
DS( on)
, [Ω ]
Drain-Source On-Resistance
I
D
,Drain Current [A]
0.40.60.81.01.
2
0.01
0.1
1
@Notes :
1. VGS = 0 V
2. 300
μ
s Pulse Test
25
o
C150
o
C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
C
rss
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 2
5
0
2
4
6
8
10
V
DS
=520V
V
DS
=320V
V
DS
=130V
@ Note : I
D
=3.0A
V
GS
,Gate-Source Voltage[V]
Q
G
,Total Gate Charge [nC]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage