Data Sheet

KA5X03XX-SERIES
3
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Note:
1. Pulse test: Pulse width ≤ 300μS, duty ≤ 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=50μA 650 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=Max. Rating, V
GS
=0V - - 50 μA
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
- - 200 μA
Static Drain-Source on Resistance
(Note)
R
DS(ON)
V
GS
=10V, I
D
=0.5A - 3.6 4.5 Ω
Forward Transconductance
(Note)
gfs V
DS
=50V, I
D
=0.5A 2.0 - - S
Input Capacitance Ciss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 720 -
pFOutput Capacitance Coss - 40 -
Reverse Transfer Capacitance Crss - 40 -
Turn On Delay Time td(on) V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
- 150 -
nS
Rise Time tr - 100 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 42 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is essentially
independent of
operating temperature)
--34
nC
Gate-Source Charge Qgs - 7.3 -
Gate-Drain (Miller) Charge Qgd - 13.3 -
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=50μA 800 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=Max. Rating, V
GS
=0V - - 250 μA
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
- - 1000 μA
Static Drain-Source on Resistance
(Note)
R
DS(ON)
V
GS
=10V, I
D
=0.5A - 4.0 5.0
Ω
Forward Transconductance
(Note)
gfs V
DS
=50V, I
D
=0.5A 1.5 2.5 - S
Input Capacitance Ciss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 779 -
pFOutput Capacitance Coss - 75.6 -
Reverse Transfer Capacitance Crss - 24.9 -
Turn On Delay Time td(on) V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-40-
nS
Rise Time tr - 95 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 60 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is
essentially independent of
operating temperature)
--34
nC
Gate-Source Charge Qgs - 7.2 -
Gate-Drain (Miller) Charge
Qgd - 12.1 -
S
1
R
----
=