Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 P-channel 350

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Publication Order Number:

J175/D

onductor Components Industries, LLC.

October-2017, Rev. 2

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177

P-Channel Switch

Ordering Information

Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package

Part Number

Marking

Package Packing Method

175-D26Z J175 TO-92 3L Tape and Reel

176-D74Z J176 TO-92 3L Ammo

MMBFJ175 6W SOT-23 3L Tape and Reel

MMBFJ176 6X SOT-23 3L Tape and Reel

MMBFJ177 6Y SOT-23 3L Tape and Reel

1. Drain

Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel

Ammo Packing

2. Gate

3. Source

SOT-23

Mark: 6W / 6X / 6Y

Note: Source & drain are interchangeable.

Description

This device is designed for low-level analog switching

sample-and-hold circuits and chopper-stabilized

amplifiers. Sourced from process 88.

Summary of content (8 pages)

PAGE 1
Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G TO-92 12 1 3 Straight Lead Bulk Packing 2 1. Drain 2. Gate 3. Source 3 S SOT-23 D Mark: 6W / 6X / 6Y Note: Source & drain are interchangeable. Bent Lead Tape & Reel Ammo Packing Figure 1. J175 / J176 Device Package Figure 2.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
PAGE 3
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 Gate Reverse Current VGS = 20 V, VDS = 0 Gate-Source Cut-Off Voltage 30 V 1.0 J175 / MMBFJ175 3.0 6.0 VDS = -15 V, ID = -10 nA J176 / MMBFJ176 1.0 4.0 MMBFJ177 0.8 2.5 J175 / MMBFJ175 -7.0 -60.0 J176 / MMBFJ176 -2.0 -25.0 MMBFJ177 -1.5 -20.
PAGE 4
- TRANSCONDUCTANCE (mmhos) V GS = 0 V -12 1.0 V 1.5 V -8 -4 2.5 V 3.0 V 3.5 V 0 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 100 50 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 μA 1 1 V GS (OFF) 16 - DRAIN CURRENT (mA) V GS(off) = - 4.5 V -24 - 55°C 25°C 125°C VGS(off) = 2.5 V -16 - 55°C 25°C 125°C VGS(off) = - 4.5 V - 55°C 25°C 125°C VGS(off) = 2.
PAGE 5
C is (C rs ) - CAPACITANCE (pF) g fs - TRANSCONDUCTANCE (mmhos) 100 10 V GS(off) = 2.5V 5 25°C V GS(off) = 6.0V - 55°C 25°C 125°C 1 0.5 V DG = -15V f = 1.0 kHz 0.1 _ 0.1 _ _ 1 10 I D - DRAIN CURRENT (mA) _ f = 0.1 - 1.0 MHz C is (V DS = -15V) 10 5 100 1 C rs (V DS = -15V) 0 r DS - DRAIN "ON" RESISTANCE (Ω) e n - NOISE VOLTAGE (nV / √ Hz) 50 I D = - 0.2 mA 10 I D = 5.0 mA 5 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz 1 0.01 0.
PAGE 6
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Physical Dimensions Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form www.onsemi.
PAGE 7
0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.
PAGE 8
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