Data Sheet

I
SL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
F
igure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Ty
pical Characteristics
(Cont
inued)
C, CAPA
CITANCE (pF)
V
CE
, COL
LECTOR TO EMITTER VOLTAGE (V)
3000
1000
500
1500
0105 152025
0
C
IE
S
FREQUENCY = 1 MHz
C
OE
S
C
RE
S
2500
2000
Q
G
, GAT
E CHARGE (nC)
V
GE
,
GATE TO EMITTER VOLTAGE (V)
0
2
4
8
0
10203040
50
3
5
7
6
1
I
G(R
EF)
= 1
mA, R
L
= 0
.6Ω, T
J
= 2
5°C
V
CE
= 6
V
V
CE
= 1
2V
BV
CE
R
, BREAKDOW
N VOLTAGE (V)
R
G
, SE
RIES GATE RESISTANCE (kΩ)
360
352
348
356
10 20001000 3000
344
100
354
350
358
346
T
J
= -
40°C
T
J
= 2
5°C
T
J
= 1
75°C
I
CER
=
10mA
342
340
Z
th
JC
, NORM
ALIZED THERMAL RESPONSE
T
1
, RECT
ANGULAR PULSE DURATION (s)
10
0
10
-2
10
-1
10
-2
10
-3
10
-4
10
-5
10
-1
10
-6
t
1
t
2
P
D
DUT
Y FACTOR, D = t
1
/
t
2
PEA
K T
J
= (
P
D
X Z
θ JC
X R
θ JC
) +
T
C
0.5
0.2
0.1
0.05
0.
02
0.01
SI
NGLE PULSE
10
-3
10
-4
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