Data Sheet

IS
L9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Figure 7.
Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
Ty
pica
l Characteristics
(Conti
nued)
I
CE
, COLL
ECTOR TO EMITTER CURRENT (A)
V
CE
, COLL
ECTOR TO EMITTER VOLTAGE (V)
0
50
40
02.01.0 3.0 4.0
30
T
J
= 175°C
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
20
10
I
CE
, COLL
ECTOR TO EMITTER CURRENT (A)
V
GE
, GATE
TO EMITTER VOLTAGE (V)
2.01.0 3.0 4.0
50
40
30
0
2.51.5 3.5 4.5
PU
LSE DURATION = 250µs
DUTY CY
CLE < 0.5%, V
CE
= 5V
T
J
= 2
5°C
T
J
= 175°C
T
J
= -
40°C
20
10
I
CE
, DC COLL
ECTOR CURRENT (A)
T
C
, CASE TEMPERATURE (°C)
50
25 1751257550 100 150
40
30
20
10
0
V
GE
= 4.0V
17550 100
2.0
1.8
1.6
1.4
1.0
V
TH
, THRE
SHOLD VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
1500 125
1.2
V
CE
= V
GE
I
CE
= 1mA
-50 7525-25
LE
AKAGE CURRENT (µA)
T
J
, JUNC
TION TEMPERATURE (°C)
1000
10
0.1
10000
100
1
25-25 17512575-50 0 50 100 150
V
ECS
= 24V
V
CES
= 300V
V
CES
= 25
0V
25 1751257550 100 150
T
J
, J
UNCTION TEMPERATURE (°C)
SWI
TCHING TIME (µS)
20
16
12
6
2
I
CE
= 6
.5A, V
GE
= 5V
, R
G
= 1KΩ
Re
sistive t
OFF
In
ductive t
OFF
Res
istive t
ON
10
14
18
8
4
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4