Data Sheet

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2
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
V5036S ISL9V5036S3ST TO-263AB 330mm 24mm 800
V5036P ISL9V5036P3 TO-220AA Tube N/A 50
V5036S ISL9V5036S3 TO-262AA Tube N/A 50
V5036S ISL9V5036S3S TO-263AB Tube N/A 50
Symbol Parameter Test Conditions Min Typ Max Units
BV
CE
R
Collec
tor to Emitter Breakdown Voltage I
C
= 2
mA, V
GE
=
0,
R
G
=
1KΩ, See Fig. 15
T
J
= -
40 to 150°C
330 360 390 V
BV
CE
S
Collec
tor to Emitter Breakdown Voltage I
C
=
10mA, V
GE
=
0,
R
G
=
0, See Fig. 15
T
J
= -
40 to 150°C
360 390 420 V
BV
EC
S
Em
itter to Collector Breakdown Voltage I
C
=
-75mA, V
GE
=
0V,
T
C
=
25°C
30 - - V
BV
GE
S
G
ate to Emitter Breakdown Voltage I
GE
S
=
± 2mA ±12 ±14 - V
I
CE
R
Collect
or to Emitter Leakage Current V
CE
R
=
250V,
R
G
=
1KΩ,
See Fig. 11
T
C
=
25°C- - 25 µA
T
C
= 15
0°C- - 1 mA
I
EC
S
Em
itter to Collector Leakage Current V
EC
=
24V, See
Fig. 11
T
C
=
25°C- - 1 mA
T
C
= 15
0°C- - 40 mA
R
1
Ser
ies Gate Resistance - 75 - Ω
R
2
G
ate to Emitter Resistance 10K - 30K Ω
V
CE
(SAT)
Collec
tor to Emitter Saturation Voltage I
C
=
10A,
V
GE
= 4.
0V
T
C
=
25°C,
See Fig. 4
- 1.17 1.60 V
V
CE
(SAT)
Collec
tor to Emitter Saturation Voltage I
C
=
15A,
V
GE
= 4.
5V
T
C
=
150°C - 1.50 1.80 V
Q
G(
ON)
G
ate Charge I
C
=
10A, V
CE
=
12V,
V
GE
=
5V, See Fig. 14
-32-nC
V
GE
(TH)
G
ate to Emitter Threshold Voltage I
C
=
1.0mA,
V
CE
= V
GE
,
See F
ig. 10
T
C
=
25°C1.3 - 2.2 V
T
C
=
150°C0.75- 1.8V
V
GE
P
G
ate to Emitter Plateau Voltage I
C
=
10A, V
CE
=
12V - 3.0 - V
t
d(
ON)R
Curr
ent Turn-On Delay Time-Resistive V
CE
= 14V
, R
L
=
1Ω,
V
GE
=
5V, R
G
=
1KΩ
T
J
=
25°C, See Fig. 12
-0.74µs
t
rR
Curr
ent Rise Time-Resistive - 2.1 7 µs
t
d(
OFF)L
Curr
ent Turn-Off Delay Time-Inductive V
CE
= 300V
, L = 2mH,
V
GE
=
5V, R
G
=
1KΩ
T
J
=
25°C, See Fig. 12
- 10.8 15 µs
t
fL
Curr
ent Fall Time-Inductive - 2.8 15 µs
SCIS Self Clamped Inductive Switching T
J
=
25°C, L = 670 µH,
R
G
=
1KΩ, V
GE
= 5V,
See
F
ig. 1 & 2
- - 500 mJ
R
θJC
T
hermal Resistance Junction-Case TO-263, TO-220, TO-262 - - 0.6 °C/W