Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsIGBT TO 263AB single

October-2017,

Rev. 3

Publication Order Number:

ISL9V5036S3S/D

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Device

Maximum Ratings

= 25°C unless other

wise noted

Sym

bol Parameter Ratings Units

CER

Coll

ector to Emitter Breakdown Voltage (I

= 1 mA

) 390 V

ECS

Emit

ter to Collector Voltage - Reverse Battery Condition (I

= 10 mA) 2

4 V

SCIS

At St

arting T

= 25°C,

SCIS

= 38.5A

, L = 670 µHy 500 mJ

SCIS1

At St

arting T

= 150°C,

SCIS

= 30A, L

= 670 µHy 300 mJ

C25

Coll

ector Current Continuous, At T

= 25°

C, See Fig 9 46 A

C110

Coll

ector Current Continuous, At T

= 110°C

, See Fig 9 31 A

GEM

Gate t

o Emitter Voltage Continuous ±10 V

Pow

er Dissipation Total T

= 25°C 250 W

wer Dissipation Derating T

> 2

5°C 1.67 W/°C

Operating J

unction Temperature Range -40 to 175 °C

STG

Storage J

unction Temperature Range -40 to 175 °C

Max Lead

Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C

pkg

Max Lead

Temp for Soldering (Package Body for 10s) 260 °C

ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

oSPARK 500mJ, 360V, N-Channel Ignition IGBT

General Description

The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next

generation IGBTs that offer outstanding SCIS capability in the D²-

Pak (TO-263) and TO-220 plastic package. These devices are

intended for use in automotive ignition circuits, specifically as coil

drivers. Internal diodes provide voltage clamping without the need

for external components.

devices can be custom made to specific clamp

voltages. Contact your nearest ON Semiconductor sales

office for more information.

Formerly Developmental Type 49443

Applications

• Automotive Ignition Coil Driver Circuits

• Coil-On Plug Applications

Features

• Industry Standard D

-Pak package

• SCIS Energy = 500mJ at T

= 25

•

Logic Level Gate Drive

Package

COLL

ECTOR

(FLANGE)

GATE

COLLECT

EMITTER

Symbol

D²-P

JEDEC TO-263AB

JEDEC TO-220AB

COLLECT

(FLANGE)

JEDEC T

O-262AA

• Qualified to AEC Q101

• RoHS Compliant

EcoSPARK

Summary of content (8 pages)

PAGE 1
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT General Description Applications • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the D²Pak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers.
PAGE 2
Device Marking V5036S Device ISL9V5036S3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 V5036P ISL9V5036P3 TO-220AA Tube N/A 50 V5036S ISL9V5036S3 TO-262AA Tube N/A 50 V5036S ISL9V5036S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig.
PAGE 3
ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 45 RG = 1KΩ, VGE = 5V,Vdd = 14V 40 35 30 TJ = 25°C 25 20 15 TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 45 RG = 1KΩ, VGE = 5V,Vdd = 14V 40 35 30 25 20 TJ = 25°C 15 TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 0 0 0 50 100 150 200 250 300 350 0 2 4 tCLP, TIME IN CLAMP (µS) 1.10 ICE = 6A 1.05 VGE = 3.7V VGE = 4.0V 1.00 VGE = 4.5V VGE = 5.0V VGE = 8.0V 0.90 0.
PAGE 4
50 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 VGE = 8.0V VGE = 5.0V VGE = 4.5V 40 VGE = 4.0V VGE = 3.7V 30 20 10 TJ = 175°C 0 0 1.0 2.0 3.0 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 40 30 TJ = 175°C 20 TJ = 25°C 10 TJ = -40°C 0 1.5 1.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.5 2.0 3.0 3.5 4.0 4.5 VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Collector Current Figure 8.
PAGE 5
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Typical Characteristics (Continued) 3000 8 IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C VGE, GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1 MHz C, CAPACITANCE (pF) 2500 2000 CIES 1500 1000 CRES 500 COES 7 6 5 VCE = 12V 4 3 2 VCE = 6V 1 0 0 5 10 15 20 0 25 0 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 20 30 40 50 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14.
PAGE 6
L VCE R or L C PULSE GEN LOAD C RG RG = 1KΩ DUT G + DUT G VCE - 5V E E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit VCE BVCES tP VCE L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV Figure 19. Energy Test Circuit Figure 20. Energy Waveforms www.onsemi.
PAGE 7
th JUNCTION REV 1 May 2002 ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3 CTHERM1 th 6 4.0e2 CTHERM2 6 5 3.6e-3 CTHERM3 5 4 4.9e-2 CTHERM4 4 3 3.2e-1 CTHERM5 3 2 3.0e-1 CTHERM6 2 tl 1.6e-2 RTHERM1 CTHERM1 6 RTHERM1 th 6 1.0e-2 RTHERM2 6 5 1.4e-1 RTHERM3 5 4 1.0e-1 RTHERM4 4 3 9.0e-2 RTHERM5 3 2 9.4e-2 RTHERM6 2 tl 1.9e-2 RTHERM2 CTHERM2 5 SABER Thermal Model SABER thermal model ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 4.0e2 ctherm.
PAGE 8
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