Data Sheet
ISL9V3040D3S
/ ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typi
cal
Perf
ormance Curves
(Continued)
Figure 13.
Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
C, CAPACITANCE
(pF)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1600
800
400
1200
0105152025
0
C
IES
C
OES
C
RES
FREQUENCY
= 1 MHz
Q
G
, GATE CHARGE
(nC)
V
GE
, GATE T
O EMITTER VOLTAGE (V)
0
2
4
8
0 4 8 1
216202428
3
5
7
6
1
32
I
G(REF)
= 1mA,
R
L
= 1.25Ω, T
J
= 25°C
V
CE
= 6V
V
CE
= 12V
BV
CER
, BREAKDOWN VOLTAGE
(V)
R
G
, SERIES
GATE RESISTANCE (kΩ)
430
410
400
420
10 20001000 3000
390
100
415
405
425
395
T
J
= - 40°C
T
J
= 25°C
T
J
= 175°C
I
CER
= 10mA
Z
thJC
, NORMALIZE
D THERMAL RESPONSE
T
1
, RECTANGULAR P
ULSE DURATION (s)
10
0
10
-2
10
-1
10
-2
10
-3
10
-4
10
-5
10
-1
DUTY F
ACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
10
-6
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE
PULSE
10
-3
www.onsemi.com
5