Data Sheet

ISL9V3040D3S
/ ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
P
ackage Marking and O
r
dering
Information
Electrical Characteristics
T
A
= 25°C unless
otherwise noted
Off S
tate Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device
Marking Device Package Reel Size Tape Width Quantity
V3040D ISL9V3040D3ST TO-252AA 330mm 16mm 2500
V3040S ISL9V3040S3ST TO-263AB 330mm 24mm 800
V3040S ISL9V3040S3 TO-262AA Tube N/A 50
V3040D ISL9V3040D3S TO-252AA Tube N/A 75
V3040S ISL9V3040S3S TO-263AB Tube N/A 50
Symbol Parameter Test Conditions Min Typ Max Units
BV
CER
Collector to
Emitter Breakdown Voltage I
C
= 2mA,
V
GE
= 0,
R
G
= 1KΩ, See F
ig. 15
T
J
= -40 to 150°C
370 400
430 V
BV
CES
Collector to
Emitter Breakdown Voltage I
C
= 10mA,
V
GE
= 0,
R
G
= 0, See Fig.
15
T
J
= -40 to 150°C
390 420
450 V
BV
ECS
Emitt
er to Collector Breakdown Voltage I
C
= -75mA,
V
GE
= 0V,
T
C
= 25°C
30 -
- V
BV
GES
Gate
to Emitter Breakdown Voltage I
GES
= ± 2mA ±12
±14 - V
I
CER
Collector to
Emitter Leakage Current V
CER
= 250V,
R
G
= 1KΩ,
See
Fig. 11
T
C
= 25°C- - 2
5 µA
T
C
= 150°C- - 1 m
A
I
ECS
Emitt
er to Collector Leakage Current V
EC
= 24V,
See
Fig. 11
T
C
= 25°C- - 1
mA
T
C
= 150°C- - 40 mA
R
1
Seri
es Gate Resistance - 70 - Ω
R
2
Gate
to Emitter Resistance 10K - 26K Ω
V
CE(SA
T)
Collector t
o Emitter Saturation Voltage I
C
= 6A,
V
GE
= 4V
T
C
= 25°C,
See F
ig. 3
- 1.25 1.60 V
V
CE(SA
T)
Collector t
o Emitter Saturation Voltage I
C
= 10A,
V
GE
= 4.5V
T
C
= 150°C,
See Fig. 4
- 1.58 1.80 V
V
CE(SA
T)
Collector t
o Emitter Saturation Voltage I
C
= 15A,
V
GE
= 4.5V
T
C
= 150°C -
1.90 2.20 V
Q
G(ON)
Gate
Charge I
C
= 10A,
V
CE
= 12V,
V
GE
= 5V,
See Fig. 14
-17-nC
V
GE(TH)
Gate to
Emitter Threshold Voltage I
C
= 1.0mA,
V
CE
= V
GE,
See Fig.
10
T
C
= 25°C1.3
- 2.2 V
T
C
= 150°C0.7
5 - 1.8 V
V
GEP
Gate t
o Emitter Plateau Voltage I
C
= 10A,
V
CE
= 12V - 3.
0 - V
t
d(ON)R
Current
Turn-On Delay Time-Resistive V
CE
= 14V, R
L
= 1Ω,
V
GE
= 5V,
R
G
= 1KΩ
T
J
= 25°C,
See Fig. 12
-0.74µs
t
rR
Current
Rise Time-Resistive - 2.1 7 µs
t
d(O
F
F
)
L
Current
Turn-Off Delay Time-Inductive V
CE
= 300V, L =
500µHy
,
V
GE
= 5
V
,
R
G
= 1
KΩ
T
J
= 25°C,
See Fig. 12
- 4.8 15 µs
t
fL
Current
Fall Time-Inductive - 2.8 15 µs
SCIS Self Clamped Inductive Switching T
J
= 25°C,
L = 3.0 mHy,
R
G
= 1KΩ, V
GE
= 5V,
See
Fig. 1 & 2
- - 300 mJ
R
θJC
Therma
l Resistance Junction-Case All packages - - 1.0 °C/W
V3040P ISL9V
3040P3 TO-220AB Tube N/A 50
www.onsemi.com
2