Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsIGBT TO 220AB single

October-2017, Rev. 3

Publication Order Number:

ISL9V3040P3/D

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /

ISL9V3040S3

PARK

300mJ, 400V, N-Channel Ignition IGBT

General Description

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and

ISL9V3040S3 are the next generation ignition IGBTs that offer

outstanding SCIS capability in the space saving D-Pak (TO-252), as

well as the industry standard D²-Pak (TO-263), and TO-262 and TO-

220 plastic packages. This device is intended for use in automotive

ignition circuits, specifically as a coil driver. Internal diodes provide

voltage clamping without the need for external components.

EcoSPARK® devices can be custom made to specific clamp

voltages. Contact your nearest On Semiconductor sales office for

more information.

Formerly Developmental Type 49362

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

Features

• Space saving D-Pak package availability

• SCIS Energy = 300mJ at T

= 25

•

Logic Level Gate Drive

evi

ximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

CER

Collector to Emitter Breakdown Voltage (I

= 1 mA) 430 V

ECS

Emitter to Collector Voltage - Reverse Battery Condition (I

= 10 mA) 24 V

SCIS25

At Starting T

= 25°C, I

SCIS

= 14.2A, L = 3.0 mHy 300 mJ

SCIS150

At Starting T

= 150°C, I

SCIS

= 10.6A, L = 3.0 mHy 170 mJ

C25

Collector Current Continuous, At T

= 25°C, See Fig 9 21 A

C110

Collector Current Continuous, At T

= 110°C, See Fig 9 17 A

GEM

Gate to Emitter Voltage Continuous ±10 V

Power Dissipation Total T

= 25°C 150 W

Power Dissipation Derating T

> 25°C 1.0 W/°C

Operating Junction Temperature Range -40 to 175 °C

STG

Storage Junction Temperature Range -40 to 175 °C

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C

pkg

Max Lead Temp for Soldering (Package Body for 10s) 260 °C

ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV

age

GATE

COLLECTO

EMITTER

Symbol

DEC

252AA

D-Pak

D²-Pak

JEDEC TO-263AB

COLLECTOR

(FLANGE)

JEDEC TO-220AB

JEDEC TO-

262AA

Summary of content (8 pages)

PAGE 1
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARK® 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO220 plastic packages.
PAGE 2
Device Marking V3040D Device ISL9V3040D3ST V3040S V3040P Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 ISL9V3040S3ST TO-263AB 330mm 24mm 800 ISL9V3040P3 TO-220AB Tube N/A 50 V3040S ISL9V3040S3 TO-262AA Tube N/A 50 V3040D ISL9V3040D3S TO-252AA Tube N/A 75 V3040S ISL9V3040S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units IC = 2mA, VGE = 0, RG = 1KΩ, See Fig.
PAGE 3
ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 RG = 1kΩ, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25°C TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 25 75 50 100 125 150 175 30 RG = 1kΩ, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25°C 10 TJ = 150°C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 200 0 2 4 tCLP, TIME IN CLAMP (µS) VGE = 3.7V VGE = 4.0V 1.26 1.22 VGE = 4.5V 1.18 VGE = 5.0V VGE = 8.0V 1.
PAGE 4
VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 175°C 0 0 1.0 2.0 3.0 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 25 20 15 TJ = 150°C 10 TJ = 25°C 5 TJ = -40°C 0 4.0 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 1.0 2.2 VTH, THRESHOLD VOLTAGE (V) 20 15 10 5 25 50 75 100 125 150 2.0 1.8 1.6 1.4 1.2 1.
PAGE 5
8 FREQUENCY = 1 MHz VGE, GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 1600 1200 CIES 800 CRES 400 COES 6 5 0 5 10 15 20 VCE = 12V 4 3 2 VCE = 6V 1 0 0 IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C 7 25 0 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) BVCER, BREAKDOWN VOLTAGE (V) 12 16 20 24 28 32 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage 430 8 Figure 14.
PAGE 6
L VCE R or L C PULSE GEN RG G C RG = 1KΩ DUT G Figure 18. tON and tOFF Switching Test Circuit BVCES VCE tP VCE L VGE 0V tP IAS C RG VDD + G VCE E Figure 17. Inductive Switching Test Circuit REQUIRED PEAK IAS + DUT 5V E VARY tP TO OBTAIN LOAD DUT - VDD E IAS 0 0.01Ω tAV Figure 19. Energy Test Circuit Figure 20. Energy Waveforms www.onsemi.
PAGE 7
REV 7 March 2002 th ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 CTHERM1 th 6 2.1e -3 CTHERM2 6 5 1.4e -1 CTHERM3 5 4 7.3e -3 CTHERM4 4 3 2.1e -1 CTHERM5 3 2 1.1e -1 CTHERM6 2 tl 6.2e +6 JUNCTION RTHERM1 RTHERM1 th 6 1.2e -1 RTHERM2 6 5 1.9e -1 RTHERM3 5 4 2.2e -1 RTHERM4 4 3 6.0e -2 RTHERM5 3 2 5.8e -2 RTHERM6 2 tl 1.
PAGE 8
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