Data Sheet
©2004 F
airchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20
SL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typi
cal
Perf
ormance Curves
(Continued)
Figure
13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
C, CAPACIT
ANCE (pF)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1600
800
400
1200
0105152025
0
C
IES
C
OES
C
RES
FREQUENCY
= 1 MHz
Q
G
, GATE CHARGE
(nC)
V
GE
, GATE T
O EMITTER VOLTAGE (V)
0
2
4
8
0 4 8
1216202428
3
5
7
6
1
32
I
G(REF
)
= 1mA,
R
L
= 1.25Ω, T
J
= 25°C
V
CE
= 6V
V
CE
= 12V
BV
CER
, BREAKDOWN VOLT
AGE (V)
R
G
Ω
)
430
410
40
0
420
10 20001000 3000
390
100
415
405
425
395
T
J
= - 40°
C
T
J
= 25°C
T
J
= 175°C
I
CER
= 10mA
Z
thJC
, NORMALIZ
ED THERMAL RESPONSE
T
1
, RECTANGULAR P
ULSE DURATION (s)
10
0
10
-2
10
-1
10
-2
10
-3
10
-4
10
-5
10
-1
DUTY
FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
10
-6
0.5
0.2
0.1
0.05
0.02
0.01
SINGL
E PULSE
10
-3
, SERIE
S GATE RESISTANCE (