Data Sheet

©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
25
15
5
0
20
10
02.01.0 3.0 4.0
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
T
J
= 175°C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
2.01.0 3.0 4.0
25
15
5
0
20
10
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 25°C
T
J
= 150°C
2.51.5 3.5 4.5
T
J
= -40°C
I
CE
, DC COLLECTOR CURRENT (A)
T
C
, CASE TEMPERATURE (°C)
25
25 1751257550 100 150
20
15
10
5
0
V
GE
= 4.0V
2.2
17550 100
2.0
1.8
1.6
1.4
1.0
V
CE
= V
GE
V
TH
, THRESHOLD VOLTAGE (V)
T
J
JUNCTION TEMPERATURE (°C)
1500-50 1257525-25
1.2
I
CE
= 1mA
LEAKAGE CURRENT (µA)
T
J
, JUNCTION TEMPERATURE (°C)
1000
10
0.1
10000
100
1
25-25 17512575-50 0 50 100 150
V
CES
= 250V
V
ECS
= 24V
V
CES
= 300V
25 1751257550 100 150
T
J
, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (µS)
12
10
8
6
4
2
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1KΩ
Resistive t
OFF
Inductive t
OFF
Resistive t
ON