Data Sheet

©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
V3040D ISL9V3040D3ST TO-252AA 330mm 16mm 2500
V3040S ISL9V3040S3ST TO-263AB 330mm 24mm 800
V3040P ISL9V3040P3 TO-220AA Tube N/A 50
V3040S ISL9V3040S3 TO-262AA Tube N/A 50
V3040D ISL9V3040D3S TO-252AA Tube N/A 75
V3040S ISL9V3040S3S TO-263AB Tube N/A 50
Symbol Parameter Test Conditions Min Typ Max Units
BV
CER
Collector to Emitter Breakdown Voltage I
C
= 2mA, V
GE
= 0,
R
G
= 1KΩ, See Fig. 15
T
J
= -40 to 150°C
370 400 430 V
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 10mA, V
GE
= 0,
R
G
= 0, See Fig. 15
T
J
= -40 to 150°C
390 420 450 V
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -75mA, V
GE
= 0V,
T
C
= 25°C
30 - - V
BV
GES
Gate to Emitter Breakdown Voltage I
GES
= ± 2mA ±12 ±14 - V
I
CER
Collector to Emitter Leakage Current V
CER
= 250V,
R
G
= 1KΩ,
See Fig. 11
T
C
= 25°C- - 25 µA
T
C
= 150°C- - 1 mA
I
ECS
Emitter to Collector Leakage Current V
EC
= 24V, See
Fig. 11
T
C
= 25°C- - 1 mA
T
C
= 150°C- - 40 mA
R
1
Series Gate Resistance - 70 - Ω
R
2
Gate to Emitter Resistance 10K - 26K Ω
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 6A,
V
GE
= 4V
T
C
= 25°C,
See Fig. 3
- 1.25 1.60 V
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 10A,
V
GE
= 4.5V
T
C
= 150°C,
See Fig. 4
- 1.58 1.80 V
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 15A,
V
GE
= 4.5V
T
C
= 150°C - 1.90 2.20 V
Q
G(ON)
Gate Charge I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
-17-nC
V
GE(TH)
Gate to Emitter Threshold Voltage I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
T
C
= 25°C1.3 - 2.2 V
T
C
= 150°C0.75 - 1.8 V
V
GEP
Gate to Emitter Plateau Voltage I
C
= 10A, V
CE
= 12V - 3.0 - V
t
d(ON)R
Current Turn-On Delay Time-Resistive V
CE
= 14V, R
L
= 1Ω,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
-0.74µs
t
rR
Current Rise Time-Resistive - 2.1 7 µs
t
d(OFF)L
Current Turn-Off Delay Time-Inductive V
CE
= 300V, L = 500µHy,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
- 4.8 15 µs
t
fL
Current Fall Time-Inductive - 2.8 15 µs
SCIS Self Clamped Inductive Switching T
J
= 25°C, L = 3.0 mHy,
R
G
= 1KΩ, V
GE
= 5V, See
Fig. 1 & 2
- - 300 mJ
R
θJC
Thermal Resistance Junction-Case All packages - - 1.0 °C/W