Data Sheet

©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
C, CAPACITANCE (nF)
2
4
6
8
10
C
RES
FREQUENCY = 1MHz
C
OES
C
IES
Z
θJC
, NORMALIZED THERMAL RESPONSE
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
10
-1
10
-2
SINGLE PULSE
10
0
10
-1
10
-2
P
D
t
1
t
2
0.50
0.05
0.01
0.02
0.10
0.20
I
EC
, FORWARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
3.02.0 2.51.51.00.50
0
25
50
75
100
125
3.5 4.0
150
175
200
100
o
C
25
o
C
-55
o
C
30
40
20
0
t, RECOVERY TIMES (ns)
I
EC
, FORWARD CURRENT (A)
2301
10
10 20
50
5
t
rr
t
a
t
b
T
C
= 25
o
C, dI
EC
/dt = 200A/µs
HGTG30N60B3D