Data Sheet

©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
, TURN-ON DELAY TIME (ns)
2010 30 50
25
30
35
40
45
50
40
55
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 3Ω, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,RISE TIME(ns)
20
0
50
250
200
100
6010
150
504030
R
G
= 3Ω, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20 30 6010
250
300
5040
100
200
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 3Ω, L = 1mH,
V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
20 30 6010
40
100
120
5040
60
80
T
J
= 150
o
C, V
GE
= 10V AND 15V
T
J
= 25
o
C, V
GE
= 10V AND 15V
R
G
= 3Ω, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
5789106
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
4
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= -55
o
C
Q
G
, GATE CHARGE (nC)
0
8
10
6
4
2
050
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
= 400V
V
CE
= 600V
150 200100
12
14
16
V
CE
= 200V
I
g (REF)
= 1mA, R
L
= 10Ω, T
C
= 25
o
C
HGTG30N60B3D