Data Sheet

©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
f
MAX
, OPERATING FREQUENCY (kHz)
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
0.1
10
6020 40
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
θJC
= 0.6
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
T
C
V
GE
110
o
C
10V
15V
15V
75
o
C
110
o
C
75
o
C 10V
10
T
J
= 150
o
C, R
G
= 3Ω, L = 1mH,
V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 13 14 15
6
8
10
12
16
20
14
150
200
250
300
350
400
500
t
SC
I
SC
18 450
V
CE
= 360V, R
G
= 3Ω, T
J
= 125
o
C
024
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
75
6810
150
125
100
175
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 10V
225
200
T
C
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
200
250
300
350
012
0
150
345
100
50
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
67
E
ON
, TURN-ON ENERGY LOSS (mJ)
5
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
4
2
1
4020 60503010
6
0
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 3Ω, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0
0.5
503020 40 6010
1.0
2.5
R
G
= 3Ω, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
2.0
1.5
3.0
3.5
4.0
4.5
HGTG30N60B3D