Data Sheet

©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURREN T
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
, OPERATING FREQUENCY (kHz)
510203040
10
100
500
V
CE
= 480V
f
MAX2
= (P
D
- P
C
)/(E
ON
+E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
(DUTY FACTOR = 50%)
R
θJC
= 0.76
o
C/W
T
J
= 150
o
C, T
C
= 75
o
C, V
GE
= 15V
R
G
= 10Ω, L = 100mH
100 200 300 400 500 600 7000
20
0
40
80
100
120
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
C
= 150
o
C, V
GE
= 15V, R
G
= 10Ω
60
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.01
0.1
0.2
0.05
0.02
SINGLE PULSE
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
, NORMALIZED THERMAL
RESPONSE
0.5
25
o
C
150
o
C
100
o
C
0 0.5 1.0 1.5 2.0 2.5
20
40
60
80
100
0
I
EC
, FORWARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
110205
50
40
30
20
10
0
t
b
t
r
, RECOVERY TIMES (ns)
I
EC
, FORWARD CURRENT (A)
t
rr
t
a
T
C
= 25
o
C, dI
EC
/dt = 100A/µs
HGTG20N60B3D