Data Sheet
©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
100
80
60
40
20
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
46810
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= -40
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
80
60
40
20
0
0246810
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
= 15V
12V
V
GE
= 9V
V
GE
= 8.5V
V
GE
= 8.0V
V
GE
= 7.5V
V
GE
= 7.0V
V
GE
= 10V
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, T
C
= 25
o
C
10
20
30
40
50
0
25 50
75
100 125 150
V
GE
= 15V
I
CE
, DC COLLECTOR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
60
80
100
012345
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 15V
C, CAPACITANCE (pF)
0 5 10 15 20 25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
1000
2000
3000
4000
5000
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
V
GE
, GATE TO EMITTER VOLTAGE (V)
0
3
6
9
12
15
0
120
240
360
480
600
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
02040
Q
G
, GATE CHARGE (nC)
V
CE
= 400V
V
CE
= 200V
80 10060
V
CE
= 600V
I
g(REF)
= 1.685mA
T
C
= 25
o
C
R
L
= 30Ω
HGTG20N60B3D