Data Sheet

HGTG20N60B3D

40A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25

C and 150

C. The

diode used in anti-parallel with the IGBT is the RHRP3060.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential.

Formerly developmental type TA49016.

Symbol

Features

• 40A, 600V at T

= 25

• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150

• Short Circuit Rated

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60B3D TO-247 G20N60B3D

NOTE: When ordering, use the entire part number.

COLLECTOR

(BOTTOM SIDE METAL)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet December 2001