Data Sheet
HGTG20N60A4 Rev. C1
www.fairchildsemi.com6
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
0 20406080100
0
1
3
4
5
2
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
89
1.7
10 12
1.8
2.0
1.9
11 13 14 15 16
2.1
2.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 30A
I
CE
= 20A
I
CE
= 10A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250s,
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORMALIZED THERMAL RESPONSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 3
L = 500H
V
DD
= 390V
+
-
HGTG20N60A4D
DUT
DIODE TA49372
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2