Data Sheet

HGTG20N60A4 Rev. C1

www.fairchildsemi.com1

File Number

HGTG20N60A4

600 V SMPS IGBT

The HGTG20N60A4 combines the best features of high

input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. This IGBT is ideal for

many high voltage switching applications operating at high

frequencies where low conduction losses are essential. This

device has been optimized for fast switching applications,

such as UPS, welder and induction heating.

Formerly Developmental Type TA49339.

Symbol

Features

• 40 A, 600 V @ T

= 110°C

• Low Saturation Voltage : V

CE(sat)

= 1.8 V @ I

= 20 A

• Typical Fall Time............55ns at T

= 125°C

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60A4 TO-247 20N60A4

NOTE: When ordering, use the entire part number.

TO-247

Data Sheet November 2013