Data Sheet

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 5
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Electrical Characteristics (Continued)
T
A
= 25°C unless otherwise specified.
Transfer Characteristics
Note:
4. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Isolation Characteristics
Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit
EMITTER
CTR
Current Transfer Ratio,
Collector-to-Emitter
I
F
= 10 mA, V
CE
= 10 V,
R
BE
= 1 MΩ
H11D1M, H11D3M,
MOC8204M
2 (20) mA (%)
I
F
= 10 mA, V
CE
= 10 V 4N38M 2 (20) mA (%)
V
CE(SAT)
Saturation Voltage
(4)
I
F
= 10 mA, I
C
= 0.5 mA,
R
BE
= 1 MΩ
H11D1M, H11D3M,
MOC8204M
0.1 0.4 V
I
F
= 20 mA, I
C
= 4 mA 4N38M 1.0 V
SWITCHING TIMES
t
ON
Non-Saturated
Turn-on Time
V
CE
= 10 V, I
C
= 2 mA,
R
L
= 100 Ω
All 5 µs
t
OFF
Turn-off Time All 5 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω