Data Sheet

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 4
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Note:
3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Forward Voltage
(3)
I
F
= 10 mA All 1.15 1.50 V
Δ V
F
Δ T
A
Forward Voltage
Temperature Coefficient
All -1.8 mV/°C
BV
R
Reverse Breakdown Voltage I
R
= 10 µA All 6 25 V
C
J
Junction Capacitance
V
F
= 0 V, f = 1 MHz
All
50 pF
V
F
= 1 V, f = 1 MHz 65 pF
I
R
Reverse Leakage Current
(3)
V
R
= 6 V All 0.05 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector-to-Emitter
(3)
R
BE
= 1 M Ω ,
I
C
= 1.0 mA, I
F
= 0
MOC8204M 400 V
H11D1M 300
V
H11D3M 200
V
No RBE, I
C
= 1.0 mA 4N38M 80
V
BV
CBO
Collector to Base
(3)
I
C
= 100 µA, I
F
= 0
MOC8204M 400 V
H11D1M 300
V
H11D3M 200 V
4N38M 80 V
BV
EBO
Emitter to Base I
E
= 100 µA, I
F
= 0 4N38M 7 V
BV
ECO
Emitter to Collector I
E
= 100 µA, I
F
= 0 All 7 10 V
I
CEO
Leakage Current
Collector to Emitter
(3)
(R
BE
= 1 M Ω )
V
CE
= 300 V, I
F
= 0,
T
A
= 25°C
MOC8204M
100 nA
V
CE
= 300 V, I
F
= 0,
T
A
= 100°C
250 µA
V
CE
= 200V, I
F
= 0,
T
A
= 25°C
H11D1M
100 nA
V
CE
= 200 V, I
F
= 0,
T
A
= 100°C
250 µA
V
CE
= 100 V, I
F
= 0,
T
A
= 25°C
H11D3M
100 nA
V
CE
= 100 V, I
F
= 0,
T
A
= 100°C
250 µA
No R
BE
, V
CE
= 60 V,
I
F
= 0, T
A
= 25°C
4N38M 50 nA