Data Sheet

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7
December 2014
4N38M, H11D1M, H11D3M, MOC8204M
6-Pin DIP High Voltage Phototransistor Optocouplers
Features
■
High Voltage:
– MOC8204M, BV
CEO
= 400 V
– H11D1M, BV
CEO
= 300 V
– H11D3M, BV
CEO
= 200 V
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
■
DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
Power Supply Regulators
■ Digital Logic Inputs
■
Microprocessor Inputs
■
Appliance Sensor Systems
■
Industrial Controls
Description
The 4N38M, H11D1M, H11D3M, and MOC8204M are
phototransistor-type optically coupled optoisolators. A
gallium arsenide infrared emitting diode is coupled with a
high voltage NPN silicon phototransistor. The device is
supplied in a standard plastic six-pin dual-in-line
package.
Schematic Package Outlines
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
BASE
N/C
Figure 2. Package Outlines
Figure 1. Schematic