Data Sheet
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM Rev. 1.4 4
H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage (I
F
= 10 mA)
T
A
= 25°C 0.80 1.18 1.50
VT
A
= -55°C 0.90 1.28 1.70
T
A
= 100°C 0.70 1.05 1.40
I
R
Reverse Leakage Current V
R
= 6.0 V 10 µA
DETECTOR
BV
CEO
Collector-to-Emitter Breakdown Voltage I
C
= 1.0 mA, I
F
= 0 70 100 V
BV
CBO
Collector-to-Base Breakdown Voltage I
C
= 100 µA, I
F
= 0 70 120 V
BV
ECO
Emitter-to-Collector Breakdown Voltage I
E
= 100 µA, I
F
= 0 7 10 V
I
CEO
Collector-to-Emitter Dark Current V
CE
= 10 V, I
F
= 0 1 50 nA
I
CBO
Collector-to-Base Dark Current V
CB
= 10 V 0.5 nA
C
CE
Capacitance V
CE
= 0 V, f = 1 MHz 8 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
DC CHARACTERISTIC
CTR
Current Transfer Ratio,
Collector-to-Emitter
I
F
= 10 mA, V
CE
= 10 V 100 300 %
V
CE (SAT)
Saturation Voltage,
Collector-to-Emitter
I
C
= 2 mA, I
F
= 20 mA 0.4 V
AC CHARACTERISTIC
T
ON
Non-Saturated Turn-on Time
I
C
= 2 mA, V
CC
= 10 V, R
L
= 100
Ω
(Figure 13)
15 µs
T
OFF
Non Saturated Turn-off Time
I
C
= 2 mA, V
CC
= 10 V, R
L
= 100
Ω
(Figure 13)
15 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω