Data Sheet

H11AG1M — 6-Pin DIP Phototransistor Optocoupler

H11AG1M Rev. 1.4

April 2015

H11AG1M

6-Pin DIP Phototransistor Optocoupler

Features

■

High-Efficiency Low-Degradation Liquid Epitaxial

IRED

■

Logic Level Compatible, Input and Output Currents,

with CMOS and LS/TTL

■

High DC Current Transfer Ratio at Low Input Currents

(as low as 200 µA)

■

Safety and Regulatory Approvals:

– UL1577, 4,170 VAC

RMS

for 1 Minute

– DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

Applications

■

CMOS Driven Solid State Reliability

■

Telephone Ring Detector

■

Digital Logic Isolation

Description

The H11AG1M device consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled with a silicon

phototransistor in a dual in-line package. This device

provides the unique feature of high current transfer ratio

at both low output voltage and low input current. This

makes it ideal for use in low-power logic circuits, tele-

communications equipment and portable electronics

isolation applications.

Schematic Package Outlines

Figure 2. Package Outlines

Figure 1. Schematic

5 COLLECTOR

4 EMITTER

BASE

ANODE

CATHODE

N/C