Data Sheet

- 150
I
C
= 100 mA,V
CE
= 5 V, f=100MHz
Transition Frequency
f
T
pF50
V
CB
= 10 V, I
E
= 0, f = 1MHz
Output Capacitance
C
obo
SMALL SIGNAL CHARACTERISTICS
V1
I
C
= 1 A, V
CE
= 2 V
Base-Emitter On Voltage
V
BE(on)
V1.25
I
C
= 1 A, I
B
= 100 mA
Base-Emitter Saturation Voltage
V
BE(sat)
mV300
600
I
C
= 1 A, I
B
= 100 mA
I
C
= 3 A, I
B
= 300 mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
300
70
100
75
15
I
C
= 50 mA, V
CE
= 2 V
I
C
= 1 A, V
CE
= 2 V
I
C
= 2 A, V
CE
= 2 V
I
C
= 6 A, V
CE
= 2 V
DC Current Gain
h
FE
ON
CHARACTERISTICS
*
nA
100
V
EB
= 4V
Emitter Cutoff Current
I
EBO
nA
uA
100
10
V
CB
= 30 V
V
CB
= 30 V, T
A
=100°C
Collector Cutoff Current
I
CBO
V5
I
E
= 100 µA
Emitter-Base Breakdown Voltage
BV
EBO
V35
I
C
= 100 µA
Collector-Base Breakdown Voltage
BV
CBO
V25
I
C
= 10 mA
Collector-Emitter Breakdown Voltage
BV
CEO
OFF CHARACTERISTICS
UnitsMaxMinTest ConditionsParameterSymbol
NPN Low Saturation Transistor
(continued)
Electrical Characteristics T
A = 25°C unless otherwise noted
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Page 2 of 2
 1998 Fairchild Semiconductor Corporation
fzt649.lwpPrNC 7/10/98 revB
FZT649