Data Sheet

July 1998
FZT649
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings* T
A = 25°C unless otherwise noted
°C-55 to +150Operating and Storage Junction Temperature Range
T
J,
T
stg
A3Collector Current - Continuous
I
C
V5Emitter-Base Voltage
V
EBO
V35Collector-Base Voltage
V
CBO
V25Collector-Emitter Voltage
V
CEO
Units
FZT649
ParameterSymbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
A = 25°C unless otherwise noted
°C/W62.5Thermal Resistance, Junction to Ambient
R
θJA
W2Total Device Dissipation
P
D
FZT649
Units
Max
Characteristic
Symbol
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 1998 Fairchild Semiconductor Corporation
fzt649.lwpPrNC 7/10/98 revB
C
E
C
B
SOT-223
FZT649
Discrete Power & Signal
Technologies